Abrupt negative differential resistance in ungated GaAs FET's
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx3/16/13894/00641377.pdf?arnumber=641377
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Simulation and comparative analysis of the DC characteristics of submicron GaN HEMTs for use in CAD software;Journal of Computational Electronics;2018-12-19
2. Observation of Negative Differential Conductance in a Reverse-Biased Ni/Ge Schottky Diode;IEEE Electron Device Letters;2009-09
3. Functional characteristics in asymmetric source/drain InAlAsSb∕InGaAs∕InP δ-doped high electron mobility transistor;Applied Physics Letters;2005-01-17
4. Effects of active-channel thickness on submicron GaAs metal semiconductor field-effect transistor characteristics;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-05
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