High-temperature threshold characteristics of a symmetrically graded InAlAs∕InxGa1−xAs∕GaAs metamorphic high electron mobility transistor-Reference-Cited by-同舟云学术

High-temperature threshold characteristics of a symmetrically graded InAlAs∕InxGa1−xAs∕GaAs metamorphic high electron mobility transistor

Published:2006-05-29 Issue:22 Volume:88 Page:223506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee C. S.,Chen Y. J.,Hsu W. C.,Su K. H.,Huang J. C.,Huang D. H.,Wu C. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2208926

Reference19 articles.

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2. High transconductance of 2.25 S/mm observed at 16 K for 195-nm-gate In/sub 0.75/Ga/sub 0.25/As/In/sub 0.52/Al/sub 0.48/As HEMT fabricated on [411]A-oriented InP substrate

3. A 20 mW, 150 GHz InP HEMT MMIC power amplifier module

4. Double-heterojunction lattice-matched and pseudomorphic InGaAs HEMT with delta -doped InP supply layers and p-InP barrier enhancement layer grown by LP-MOVPE

5. Characteristics of In<tex>$_0.425$</tex>Al<tex>$_0.575$</tex>As–InxGa<tex>$_1-x$</tex>As Metamorphic HEMTs With Pseudomorphic and Symmetrically Graded Channels

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2. Comparative studies of MOS-gate/oxide-passivated AlGaAs/InGaAs pHEMTs by using ozone water oxidation technique;Semiconductor Science and Technology;2012-04-27

3. Improved Thermal Stability Performance of an MHEMT with a Double δ-Doped Structure;Electrochemical and Solid-State Letters;2011

4. Investigations on InP/InAlAsSb/GaAs Metamorphic High Electron Mobility Transistors with a Dual-Composition-Graded InxGa1−xAs1−ySby Channel and Different Schottky-Barrier Gate Structures;Journal of The Electrochemical Society;2011

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