Characterization of growth and crystallization processes in CoFeB∕MgO∕CoFeB magnetic tunnel junction structure by reflective high-energy electron diffraction-Reference-Cited by-同舟云学术

Characterization of growth and crystallization processes in CoFeB∕MgO∕CoFeB magnetic tunnel junction structure by reflective high-energy electron diffraction

Published:2005-12-12 Issue:24 Volume:87 Page:242503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yuasa Shinji,Suzuki Yoshishige,Katayama Toshikazu,Ando Koji

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2140612

Reference14 articles.

1. Giant magnetic tunneling effect in Fe/Al2O3/Fe junction

2. Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions

3. Large magnetoresistance in Fe/MgO/FeCo(001) epitaxial tunnel junctions on GaAs(001)

4. High tunnel magnetoresistance in epitaxial Fe/MgO/Fe tunnel junctions

5. High Tunnel Magnetoresistance at Room Temperature in Fully Epitaxial Fe/MgO/Fe Tunnel Junctions due to Coherent Spin-Polarized Tunneling

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