Effect of Heavy Metal (HM) Stacking on Magnetic Anisotropy of HM/CoFeB/MgO Structures
Author:
Affiliation:
1. Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, South Korea
Funder
Ministry of Trade, Industry and Energy
Ministry of Education
Korea Semiconductor Research Consortium (KSRC) support program for the development of the future semiconductor device
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/20/10649776/10534843.pdf?arnumber=10534843
Reference23 articles.
1. Crossover between in-plane and perpendicular anisotropy in Ta/CoxFe100-x/MgO films as a function of Co composition
2. Study of the relationship between magnetic anisotropy and composition ratio of Fe oxide to Fe at CoFeB/MgO film interface
3. Efficient spin–orbit torque in magnetic trilayers using all three polarizations of a spin current
4. Ultrafast magnetization switching by spin-orbit torques
5. Field-Free Spin–Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current
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