Field-Free Spin–Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current-Reference-Cited by-同舟云学术

Field-Free Spin–Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current

Published:2023-06-09 Issue:12 Volume:23 Page:5482-5489
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Kateel Vaishnavi¹²^ORCID,Krizakova Viola³,Rao Siddharth¹,Cai Kaiming¹,Gupta Mohit¹,Monteiro Maxwel Gama¹²,Yasin Farrukh¹,Sorée Bart¹²,De Boeck Johan¹²,Couet Sebastien¹,Gambardella Pietro³,Kar Gouri Sankar¹,Garello Kevin¹⁴

Affiliation:

1. IMEC Kapeldreef 75, B-3001 Leuven, Belgium

2. Department of Electrical Engineering ESAT, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium

3. Department of Materials, ETH Zurich, 8093 Zürich, Switzerland

4. Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, 38000 Grenoble, France

Funder

Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.3c00639

Reference39 articles.

1. Advances in Emerging Memory Technologies: From Data Storage to Artificial Intelligence

2. Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

3. Current-Induced Switching of Perpendicularly Magnetized Magnetic Layers Using Spin Torque from the Spin Hall Effect

4. Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction

5. Ultrafast magnetization switching by spin-orbit torques

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