Tailoring Si(100) substrate surfaces for GaP growth by Ga deposition: A low-energy electron microscopy study
Author:
Affiliation:
1. TU Clausthal, Institut für Energieforschung und Physikalische Technologien, Leibnizstraße 4, D-38678 Clausthal-Zellerfeld, Germany
Funder
Deutsche Forschungsgemeinschaft (DFG)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4927725
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1. III N V semiconductors for solar photovoltaic applications
2. Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)
3. Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES)
4. GaAs epitaxy on Si substrates: modern status of research and engineering
5. Dilute nitride Ga(NAsP)/GaP-heterostructures: toward a material development for novel optoelectronic functionality on Si-substrate
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1. Structure and Origin of Antiphase Domains and Related Defects in Thin GaP Epilayers on As-Modified Si(100);Crystal Growth & Design;2022-11-17
2. Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers;Journal of Crystal Growth;2020-02
3. Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory;Progress in Crystal Growth and Characterization of Materials;2018-12
4. Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics;physica status solidi (b);2017-11-27
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