Electron channeling contrast imaging investigation of stacking fault pyramids in GaP on Si nucleation layers
Author:
Funder
U.S. Department of Energy
Bundesministerium für Bildung und Forschung
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference32 articles.
1. How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches;Kunert;Semicond. Sci. Technol.,2018
2. Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory;Supplie;Prog. Cryst. Growth Charact. Mater.,2018
3. Dislocation generation mechanisms for GaP on Si grown by metalorganic chemical vapor deposition;Soga;Appl. Phys. Lett.,1993
4. Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices;Yamaguchi;J. Mater. Res.,1991
5. Gallium arsenide and other compound semiconductors on silicon;Fang;J. Appl. Phys.,1990
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Log-Normal Glide and the Formation of Misfit Dislocation Networks in Heteroepitaxial ZnS on GaP;Crystal Growth & Design;2024-07-03
2. Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers;AIP Advances;2024-03-01
3. Influence of microscope settings on dislocation imaging in transmission forescattered electron imaging (t-FSEI);Materials Characterization;2023-09
4. Coalescence of GaP on V-Groove Si Substrates;ACS Applied Electronic Materials;2023-02-16
5. Advanced transmission electron microscopy investigation of defect formation in movpe-growth of gap on silicon using arsenic initial coverage;Applied Surface Science;2023-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3