Dislocation generation mechanisms for GaP on Si grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110427
Reference9 articles.
1. Low‐threshold continuous‐wave room‐temperature operation of AlxGa1−xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2back coating
2. First Demonstration of AlxGa1-xAs/Si Monolithic Tandem Solar Cells Grown by Metalorganic Chemical Vapor Deposition
3. GaAs MESFET's fabricated on monolithic GaAs/Si substrates
4. Molecular beam epitaxial growth of GaP on Si
5. Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by metalorganic chemical vapor deposition
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