Molecular beam epitaxial growth of GaP on Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333333
Reference27 articles.
1. Polar‐on‐nonpolar epitaxy: Sublattice ordering in the nucleation and growth of GaP on Si(211) surfaces
2. Heteroepitaxial growth of gallium phosphide on silicon
3. Heteroepitaxial Growth of GaP on a Si (100) Substrate by Molecular Beam Epitaxy
4. Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy
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