1. F. Xiong ,
E. Yalon ,
A. Behnam ,
C. M. Neumann ,
K. L. Grosse ,
S. Deshmukh , and
E. Pop , in International Electron Devices Meeting, Technical Digest (2016), p. 4.1.1.
2. Phase Change Materials and Their Application to Nonvolatile Memories
3. S.W. Chung ,
T. Kishi ,
J. W. Park ,
M. Yoshikawa ,
K. S. Park ,
T. Nagase ,
K. Sunouchi ,
H. Kanaya ,
G. C. Kim ,
K. Noma ,
M. S. Lee ,
A. Yamamoto ,
K. M. Rho ,
K. Tsuchida ,
S. J. Chung ,
J. Y. Yi ,
H. S. Kim ,
Y. S. Chun ,
H. Oyamatsu , and
S. J. Hong , in International Electron Devices Meeting, Technical Digest (2016), p. 27.1.1.
4. A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View
5. Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash