Long-wavelength light emission from self-assembled heterojunction quantum dots
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2919121
Reference15 articles.
1. InAs/GaAs quantum dots optically active at 1.5 μm
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4. Growth of InAsSb Quantum Dots on GaAs Substrates Using Periodic Supply Epitaxy
5. 1.55μm emission from InAs∕GaAs quantum dots grown by metal organic chemical vapor deposition via antimony incorporation
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1. DFT study on the controllable electronic and optical properties of GaSb/InAs heterostructure;Journal of Materials Research;2021-03-08
2. Exciton confinement in strain-engineered metamorphic InAs/ InxGa1–xAs quantum dots;Physical Review B;2017-11-08
3. Abnormal temperature dependencies of photoluminescence and carrier transfer in InAs QDs and DWELL structures grown on GaAs (1 1 5)A emitting near 1.3 µm wavelength;Journal of Luminescence;2014-04
4. STRAIN DISTRIBUTION AND ELECTRONIC STRUCTURE OF SELF-ORGANIZED InAs/GaAs QUANTUM DOTS;Journal of Nonlinear Optical Physics & Materials;2009-12
5. Effects of the thickness of spacing layer and capping layer on the strain distribution and wavelength emission of InAs/GaAs quantum dot;Acta Physica Sinica;2009
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