Materials and electrical characterization of physical vapor deposited LaxLu1−xO3 thin films on 300 mm silicon-Reference-Cited by-同舟云学术

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Materials and electrical characterization of physical vapor deposited LaxLu1−xO3 thin films on 300 mm silicon

Published:2011-03-21 Issue:12 Volume:98 Page:122905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Edge L. F.,Vo T.,Paruchuri V. K.,Iijima R.,Bruley J.,Jordan-Sweet J.,Linder B. P.,Kellock A. J.,Tsunoda T.,Shinde S. R.

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3562321

Reference17 articles.

1. Gate Oxides Beyond SiO2

2. Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon

3. Engineering chemically abrupt high-k metal oxide∕silicon interfaces using an oxygen-gettering metal overlayer

4. High-κ gate dielectrics: Current status and materials properties considerations

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3. Band offsets, Schottky barrier heights, and their effects on electronic devices;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-09

4. Effect of oxygen on tuning the TiNx metal gate work function on LaLuO3;Thin Solid Films;2012-09

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