Role of the Ge surface during the end of range dissolution
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4759031
Reference20 articles.
1. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K
2. Activation and carrier mobility in high fluence B implanted germanium
3. High-resolution X-ray diffraction by end of range defects in self-amorphized Ge
4. End of range defects in Ge
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