Exposure instrumentation for the application of x‐ray lithography using synchrotron radiation
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1140803
Reference8 articles.
1. Fabrication of fully scaled 0.5-μm n-type metal–oxide semiconductor test devices using synchrotron x-ray lithography: Overlay, resist processes, and device fabrication
2. Development of highly reliable synchrotron radiation lithography beamline
3. Automatic mask alignment for X-ray microlithography
4. Resolution limits in x-ray lithography calculated by means of x-ray lithography simulator XMAS
5. Application of the simulator “XMAS” on specific problems in sub-half-micron lithography
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A beamline for photochemical processes at atmospheric pressure;Journal of Synchrotron Radiation;1998-05-01
2. Lithography for micro-electronics;Radiation Physics and Chemistry;1995-03
3. Status of the compact synchrotron radiation source cosy and first exposure experiments;Microelectronic Engineering;1991-03
4. Development of centrally controlled synchrotron radiation lithography beamline system;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1990-11
5. Application of positive and negative tone x-ray resist for 0.5μm CMOS device fabrication;Microelectronic Engineering;1990-04
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