Fabrication of fully scaled 0.5-μm n-type metal–oxide semiconductor test devices using synchrotron x-ray lithography: Overlay, resist processes, and device fabrication

Author:

Silverman J. P.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 35 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Capability of 70 nm Pattern Replication in X-Ray Lithography;Japanese Journal of Applied Physics;2001-03-15

2. X-Ray Lithography;Handbook of VLSI Microlithography;2001

3. A simple and compact synchrotron radiation x‐ray exposure system in a vacuum for ultrafine pattern fabrication;Review of Scientific Instruments;1995-12

4. Fabrication of 0.2 μm large scale integrated circuits using synchrotron radiation x-ray lithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1995-11

5. Evaluation of overlay accuracy for the x-ray stepper TOXS-1;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-11

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