Fabrication of fully scaled 0.5-μm n-type metal–oxide semiconductor test devices using synchrotron x-ray lithography: Overlay, resist processes, and device fabrication
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Published:1988-11
Issue:6
Volume:6
Page:2147
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:
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Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering
Cited by
35 articles.
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