Lateral solid phase crystallization of amorphous Si induced by patterned indium tin oxide on a glass substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105277
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1. Active-Matrix Thin-Film Transistor Liquid-Crystal Displays
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4. Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films
5. TEM Observations of Initial Crystallization States for LPCVD Si Films
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1. Deposition of Intrinsic and Doped Semiconductor Thin Films for a-Si:H TFT;Thin Film Transistors;2004
2. Plasma Etching and Deposition for a‐Si:H Thin Film Transistors;Journal of The Electrochemical Society;1995-07-01
3. Effect of pressure on the growth of crystallites of low‐pressure chemical‐vapor‐deposited polycrystalline silicon films and the effective electron mobility under high normal field in thin‐film transistors;Journal of Applied Physics;1993-06-15
4. Crystallization of amorphous thin low pressure chemical vapour deposition silicon films: in situ TEM measurement of grain growth rates;Journal of Materials Science Letters;1993-01
5. Comparative study of thin poly‐Si films grown by ion implantation and annealing with spectroscopic ellipsometry, Raman spectroscopy, and electron microscopy;Journal of Applied Physics;1992-10-15
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