Comparative study of thin poly‐Si films grown by ion implantation and annealing with spectroscopic ellipsometry, Raman spectroscopy, and electron microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352308
Reference33 articles.
1. Recrystallization of silicon amorphized by carbon implantation
2. Ion‐bombardment‐enhanced grain growth in germanium, silicon, and gold thin films
3. Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO2
4. Structural studies of low‐temperature low‐pressure chemical deposited polycrystalline silicon
5. Surface‐roughness and grain‐boundary effects on the optical properties of low‐pressure chemical‐vapor‐deposited silicon thin films by spectroscopic ellipsometry
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