Raman scattering by interface phonons in GaAs‐AlAs multiple‐quantum‐well structures: Correlation between Raman and high‐resolution electron microscopy results-Reference-Cited by-同舟云学术

Raman scattering by interface phonons in GaAs‐AlAs multiple‐quantum‐well structures: Correlation between Raman and high‐resolution electron microscopy results

Published:1991-07 Issue:1 Volume:70 Page:418-421
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tsen K. T.,Smith David J.,Tsen S.‐C. Y.,Kumar Nathan S.,Morkoc H.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.350291

Reference10 articles.

1. Interface Vibrational Modes in GaAs-AlAs Superlattices

2. Suppression of Raman scattering by interface phonons in quantum wells under high photoexcitation

3. Magnetic-field-enhanced Raman scattering by confined and interface phonons in semiconductor superlattices

4. Resonance Raman scattering induced by interface roughness in a short-period GaAs/Ga1−xAlxAs superlattice

5. Time-resolved Raman scattering of nonequilibrium LO phonons in GaAs quantum wells

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