Resonance Raman scattering induced by interface roughness in a short-period GaAs/Ga1−xAlxAs superlattice
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.39.3254/fulltext
Reference17 articles.
1. Spatially Extended Optical Interface Modes in a Two-Layer Periodic Structure
2. Electron–Phonon Interaction in Periodic Two-Layer Structures
3. Collective excitations of semi-infinite superlattice structures: Surface plasmons, bulk plasmons, and the electron-energy-loss spectrum
4. Raman scattering in superlattices: Anisotropy of polar phonons
5. Interface Vibrational Modes in GaAs-AlAs Superlattices
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1. Pressure-Tuned Resonance Raman Scattering in InAs/GaSb Superlattices;physica status solidi (b);1996-11-01
2. Short- and long-range-order effects on the electronic properties of III-V semiconductor alloys;Physical Review B;1995-04-15
3. Electronic structure and density of states of the randomAl0.5Ga0.5As,GaAs0.5P0.5, andGa0.5In0.5As semiconductor alloys;Physical Review B;1991-10-15
4. Raman scattering by interface phonons in GaAs‐AlAs multiple‐quantum‐well structures: Correlation between Raman and high‐resolution electron microscopy results;Journal of Applied Physics;1991-07
5. Influence of bulk-phonon-branch dispersion on displacement patterns and the intermixing of interface and confined optical phonons in superlattices;Physical Review B;1991-03-15
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