Strong interface localization of phonons in nonabrupt InN/GaN superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.201306/fulltext
Reference22 articles.
1. InGaN-based violet laser diodes
2. Exciton localization and interface roughness in growth-interrupted GaAs/AlAs quantum wells
3. Optical characterization of GaAs/AlAs multiple quantum wells interfaces
4. Surface segregation and interface stability of AlN/GaN, GaN/InN, and AlN/InN {0001} epitaxial systems
5. Atomic Scale Indium Distribution in aGaN/In0.43Ga0.57N/Al0.1Ga0.9NQuantum Well Structure
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1. Phonon modes and topological phonon properties in (GaN)x/(AlN)x and (AlGaN)x/(GaN)x superlattices;Physica Scripta;2023-07-20
2. Interface-induced localization of phonons in BeSe/ZnSe superlattices;Applied Physics Letters;2020-11-02
3. Concentration effects on the Raman scattering of AlGaN/GaN superlattices;Surface Science;2004-05
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