Very low turn-on voltage and high brightness tris-(8-hydroxyquinoline) aluminum-based organic light-emitting diodes with a MoOx p-doping layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2890490
Reference21 articles.
1. Dopant emission mechanism and the effects of host materials on the behavior of doped organic light-emitting diodes
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3. Extremely low voltage organic light-emitting diodes with p-doped alpha-sexithiophene hole transport and n-doped phenyldipyrenylphosphine oxide electron transport layers
4. Controlled p-doping of zinc phthalocyanine by coevaporation with tetrafluorotetracyanoquinodimethane: A direct and inverse photoemission study
5. Study of hole concentration of 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′ diamine doped with tungsten oxide by admittance spectroscopy
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