Extremely low voltage organic light-emitting diodes with p-doped alpha-sexithiophene hole transport and n-doped phenyldipyrenylphosphine oxide electron transport layers-Reference-Cited by-同舟云学术

Extremely low voltage organic light-emitting diodes with p-doped alpha-sexithiophene hole transport and n-doped phenyldipyrenylphosphine oxide electron transport layers

Published:2006-12-18 Issue:25 Volume:89 Page:253506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Matsushima Toshinori,Adachi Chihaya

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2410236

Reference16 articles.

1. Low-voltage organic electroluminescent devices using pin structures

2. Electrophosphorescent p–i–n Organic Light‐Emitting Devices for Very‐High‐Efficiency Flat‐Panel Displays

3. Influence of the thickness and doping of the emission layer on the performance of organic light-emitting diodes with PiN structure

4. Controlled doping of phthalocyanine layers by cosublimation with acceptor molecules: A systematic Seebeck and conductivity study

5. Extremely low-voltage driving of organic light-emitting diodes with a Cs-doped phenyldipyrenylphosphine oxide layer as an electron-injection layer

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