Study of hole concentration of 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′ diamine doped with tungsten oxide by admittance spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2345610
Reference19 articles.
1. Organic electroluminescent diodes
2. Indium–tin oxide treatments for single- and double-layer polymeric light-emitting diodes: The relation between the anode physical, chemical, and morphological properties and the device performance
3. Characterization of treated indium–tin–oxide surfaces used in electroluminescent devices
4. Organic electroluminescent devices with improved stability
5. Polyaniline as a transparent electrode for polymer light‐emitting diodes: Lower operating voltage and higher efficiency
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