Effects of antimony (Sb) on electron trapping near SiO2/4H-SiC interfaces
Author:
Affiliation:
1. Physics Department, Simon Fraser University, Burnaby, British Columbia V5A 1S6, Canada
2. Physics Department, Auburn University, Auburn, Alabama 36849, USA
Funder
National Science Foundation (NSF)
Natural Sciences and Engineering Research Council of Canada (NSERC)
Army Research Laboratory (ARL)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/jap/120/3/1.4958852.pdf?itemId=/content/aip/journal/jap/120/3/10.1063/1.4958852&mimeType=pdf&containerItemId=content/aip/journal/jap
Reference24 articles.
1. Silicon carbide: A unique platform for metal-oxide-semiconductor physics
2. Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide
3. High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer
4. Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation
5. SiO2/4H-SiC interface doping during post-deposition-annealing of the oxide in N2O or POCl3
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Boron and barium incorporation at the 4H-SiC/SiO2 interface using a laser multi-charged ion source;Journal of Materials Science: Materials in Electronics;2021-05-17
2. Influences of pre-oxidation nitrogen implantation and post-oxidation annealing on channel mobility of 4H-SiC MOSFETs;Journal of Crystal Growth;2020-02
3. Mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation;Semiconductor Science and Technology;2018-05-02
4. 4H-SiC MOSFETs With Borosilicate Glass Gate Dielectric and Antimony Counter-Doping;IEEE Electron Device Letters;2017-10
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