Modelling the inhomogeneous SiC Schottky interface-Reference-Cited by-同舟云学术

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Modelling the inhomogeneous SiC Schottky interface

Published:2013-12-14 Issue:22 Volume:114 Page:223704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gammon P. M.,Pérez-Tomás A.,Shah V. A.,Vavasour O.,Donchev E.,Pang J. S.,Myronov M.,Fisher C. A.,Jennings M. R.,Leadley D. R.,Mawby P. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4842096

Reference44 articles.

1. Smaller, faster, tougher

2. Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors

3. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

4. Thermal annealing effects on Ni/Au based Schottky contacts on n-GaN and AlGaN/GaN with insertion of high work function metal

5. Status of InP HEMT technology for microwave receiver applications

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