Status of InP HEMT technology for microwave receiver applications-Reference-Cited by-同舟云学术

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Status of InP HEMT technology for microwave receiver applications

Published:1996 Issue:12 Volume:44 Page:2328-2333
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Smith P.M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx1/22/12049/00554545.pdf?arnumber=554545

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Microwave characteristics analysis of photosensitive material InP under weak optical irradiation;Results in Physics;2020-09

2. Microwave Characteristics Analysis of Typical Photosensitive Material InP Under Weak Light Irradiation Based on Quasi-Optical Resonator;Electronic Materials Letters;2020-01-02

3. Modelling the inhomogeneous SiC Schottky interface;Journal of Applied Physics;2013-12-14

4. A study of temperature-related non-linearity at the metal-silicon interface;Journal of Applied Physics;2012-12

5. Sub-0.5 dB NF broadband low-noise amplifier using a novel InGaAs/InAlAs/InP pHEMT;2008 International Conference on Advanced Semiconductor Devices and Microsystems;2008-10

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