The role of hole leakage in 1300-nm InGaAsN quantum-well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1558218
Reference20 articles.
1. Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers
2. Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
3. Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28 – 1.38 [micro sign]m
4. 1.32-μm GaInNAs-GaAs laser with a low threshold current density
5. 8 W continuous wave operation of InGaAsN lasers at 1.3 [micro sign]m
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