Tertiary alkyl halides as growth activator and inhibitor for novel atomic layer deposition of low resistive titanium nitride
Author:
Affiliation:
1. Thin Film Materials Development Team, Soulbrain, 14-102 Gongdan-Gil, Gongju, Republic of Korea
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0031127
Reference42 articles.
1. On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices
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4. Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3–Ar–H2 plasma treatment for capacitor electrodes
5. Etching characteristics of TiN used as hard mask in dielectric etch process
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