Demonstration of long minority carrier lifetimes in very narrow bandgap ternary InAs/GaInSb superlattices
Author:
Affiliation:
1. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, Ohio 45433, USA
2. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
Funder
Air Force Research Laboratory (AFRL)
Sandia National Laboratories, National Nuclear Security Administration
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4932056
Reference20 articles.
1. Proposal for strained type II superlattice infrared detectors
2. Type-II superlattice photodiodes: an alternative for VLWIR detection
3. Superlattice parameters for optimum absorption in InAs/InxGa1−xSb superlattice infrared detectors
4. The family (InAs, GaSb, AlSb) and its heterostructures: a selective review
5. Modeling of very long infrared wavelength InAs/GaInSb strained layer superlattice detectors
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1. Carrier recombination dynamics and temperature dependent optical properties of InAs–GaSb heterostructures;Journal of Materials Chemistry C;2022
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5. Significantly enhanced carrier lifetimes of very long-wave infrared absorbers based on strained-layer InAs/GaInSb superlattices;Optical Engineering;2017-01-11
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