Modeling of very long infrared wavelength InAs/GaInSb strained layer superlattice detectors-Reference-Cited by-同舟云学术

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Modeling of very long infrared wavelength InAs/GaInSb strained layer superlattice detectors

Published:2002-12-01 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Materials for Infrared Detectors II
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Author:

Grein Christoph H.,Lau Wayne H.,Harbert T. L.,Flatte Michael E.

Publisher

SPIE

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of position-dependent effective mass on electron tunneling of InAs/GaSb type-II superlattice having triangular and parabolic geometries;Optics & Laser Technology;2021-06

2. Atomic composition, structure, and electrical properties of In1-xGaxSb films deposited by magnetron sputtering;Thin Solid Films;2020-09

3. Correlation Between Bands Structure and Quantum Magneto Transport Properties in InAs/GaxIn1−xSb Type II Superlattice for Infrared Detection;Frontiers in Physics;2020-03-18

4. A comprehensive set of simulation tools to model and design high-performance Type-II InAs/GaSb superlattice infrared detectors;Quantum Sensing and Nano Electronics and Photonics XVI;2019-02-01

5. Type-II Superlattice Heterojunction Photodetector with Optoelectronic Characterization and Analytical/ Numerical Simulation;Two-dimensional Materials for Photodetector;2018-04-04

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