GaSb-based 2.X μm quantum-well diode lasers with low beam divergence and high output power
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2178506
Reference11 articles.
1. 4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes
2. Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 μm diode lasers
3. Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves
4. C. Pfahler, C. Manz, G. Kaufel, M. Kelemen, M. Mikulla, and J. Wagner, Proceedings of the 2004 IEEE LEOS Annual Meeting (IEEE, New York, 2004), p. 479.
5. Low threshold room-temperature continuous-wave operation of 2.24–3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers
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