Affiliation:
1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083, China
2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences 2 , Beijing 100049, China
Abstract
Antimonide semiconductor laser diodes with high brightness are ideal light sources for a variety of applications. However, the traditional structure of broad-area (BA) lasers with high-power output is normally accompanied by a multi-lobed far field profile and large lateral divergence. In this paper, we put up an on-chip microstructure for mode filtering. The excellent mode control capability is doubly confirmed by optical field simulations and complete device measurements. The optimized device shows an enhanced continuous-wave output power in exceeding of 1.3 W at room temperature, along with a reduced threshold current and increased peak power conversion efficiency. Moreover, it exhibits an ultra-stable lateral far field with a 45.6% reduction in divergence and a notable 75.5% improvement in current dependence compared with conventional BA diode lasers. The minimum divergence is as low as 5.64° for full width at half maximum definition.
Funder
National Natural Science Foundation of China
Chinese Academy of Sciences and Changchun City Science and Technology Innovation Cooperation
Innovation Program for Quantum Science and Technology
“Announce the list and take charge” of the major special plan of science and technology in Shanxi Province
Key R&D Program of Shanxi Province
Jincheng Key Research and Development Project
R&D Program of Guangdong Province
Subject
Physics and Astronomy (miscellaneous)