Positron study of plasma‐enhanced chemical vapor deposited silicon nitride films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360115
Reference44 articles.
1. Silicon oxide and nitride films deposited by an r.f. glow-discharge
2. The Preparation and Properties of Thin Film Silicon-Nitrogen Compounds Produced by a Radio Frequency Glow Discharge Reaction
3. Electrical properties of Si‐N films deposited on silicon from reactive plasma
4. Plasma Si nitride—A promising dielectric to achieve high‐quality silicon MIS/IL solar cells
5. Plasma Si nitride—A promising dielectric to achieve high‐quality silicon MIS/IL solar cells
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1. Defects dynamics in annealed Si3N4by positron annihilation spectroscopy;physica status solidi (c);2009-11
2. Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiNx films and silicon substrate surface roughness on surface passivation;Journal of Applied Physics;2005-03-15
3. Electrical Properties of Fluorine-Doped Oxynitride Films Prepared by Photoillumination Liquid-Phase Deposition;Journal of The Electrochemical Society;2004
4. High-Quality Nitrogen-Doped Fluorinated Silicon Oxide Films Prepared by Temperature-Difference-Based Liquid-Phase Deposition;The Journal of Physical Chemistry B;2003-10-23
5. High Quality Fluorinated Silicon Dioxide Films Prepared by Temperature-Difference-Based Liquid-Phase Deposition with Ammonium Hydroxide Incorporation;Journal of The Electrochemical Society;2003
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