Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4870419
Reference23 articles.
1. Conductivity Degradation of 4H-SiC p–i–n Diode with In-Grown Stacking Faults
2. Growth of thick and low-doped 4H-SiC epitaxial layers in a vertical radiant-heating VPE reactor
3. Quantitative two‐dimensional dopant profile measurement and inverse modeling by scanning capacitance microscopy
4. Scanning capacitance microscopy on a 25 nm scale
5. Scanning capacitance microscopy
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