Growth of thick and low-doped 4H-SiC epitaxial layers in a vertical radiant-heating VPE reactor
Author:
Publisher
Wiley
Subject
Electrical and Electronic Engineering,Energy Engineering and Power Technology
Reference23 articles.
1. High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers
2. SiC Integrated MOSFETs
3. Characterization of Thick 4H-SiC Hot-Wall CVD Layers
4. 6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop
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1. Fundamentals of planar-type inductively coupled thermal plasmas on a substrate for large-area material processing;Japanese Journal of Applied Physics;2016-06-23
2. Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy;Applied Physics Letters;2014-03-31
3. Effects of C/Si ratio in fast epitaxial growth of 4H–SiC(0001) by vertical hot-wall chemical vapor deposition;Journal of Crystal Growth;2005-08
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