Exchange-enhanced g‐factors in an Al0.25Ga0.75N∕GaN two-dimensional electron system
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1815390
Reference24 articles.
1. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
2. Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect
3. Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire
4. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
5. Occupation of the double subbands by the two-dimensional electron gas in the triangular quantum well atAlxGa1−xN/GaNheterostructures
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