Simulation study of a novel AlGaN/GaN L‐FER with ultralow turn‐on voltage and low reverse leakage-Reference-Cited by-同舟云学术

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Simulation study of a novel AlGaN/GaN L‐FER with ultralow turn‐on voltage and low reverse leakage

Published:2022-04-22 Issue:8 Volume:17 Page:186-192
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Shi Yijun¹,Wang Hongyue¹,Zhou Bin¹,Chen Yiqiang¹,Huang Yun¹

Affiliation:

1. China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou China

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mna2.12122

Reference14 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure

3. Spin dynamics in GaN/Al0.1Ga0.9N quantum well with complex band edge structure

4. Exchange-enhanced g‐factors in an Al0.25Ga0.75N∕GaN two-dimensional electron system

5. Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical Investigation of Zero-Dimensional Freestanding Nanowire FER-AlGaN/GaN HEMTs for Low-Power Applications;Arabian Journal for Science and Engineering;2024-02-05

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