Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier-Reference-Cited by-同舟云学术

Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier

Published:2021-02-09 Issue:15 Volume:31 Page:2009771
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Zhang Xiaoyue¹^ORCID,Tang Ning¹²,Yang Liuyun¹,Fang Chi³,Wan Caihua³,Liu Xingchen¹,Zhang Shixiong¹,Zhang Yunfan¹,Wang Xinqiang¹²,Lu Yuan⁴,Ge Weikun¹,Han Xiufeng³,Shen Bo¹²

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking University Beijing 100871 China

2. Frontiers Science Center for Nano‐optoelectronics & Collaboration Innovation Center of Quantum Matter Peking University Beijing 100871 China

3. Beijing National Laboratory for Condensed Matter Physics Institute of Physics University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 China

4. Institut Jean Lamour Université de Lorraine, CNRS UMR7198, Campus ARTEM 2 Allée André Guinier BP 50840 Nancy 54011 France

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Agence Nationale de la Recherche

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202009771

Reference41 articles.