Diffusing arsenic vacancies and their interaction with the native defect EL2 in GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.361037
Reference5 articles.
1. Suppression of the dominant recombination center inn‐type GaAs by proximity annealing of wafers
2. Energetics of the As vacancy in GaAs: The stability of the 3+ charge state
3. Outdiffusion of deep electron traps in epitaxial GaAs
4. Outdiffusion of the main electron trap in bulk GaAs due to thermal treatment
5. Diffusion in GaAs of a native defect tagged with deuterium
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