Suppression of the dominant recombination center inn‐type GaAs by proximity annealing of wafers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346995
Reference13 articles.
1. Defect suppression and enhancement of minority carrier lifetimes in bulk GaAs
2. Reduction of bulk and surface recombination in GaAs for improved solar cell performance
3. The effect of annealing treatments on defect structure and diffusion lengths in bulkn‐type GaAs
4. Effects of contact metals on minority carrier diffusion lengths in GaAs
5. Annealing behavior of undoped bulk GaAs
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1. Diffusing arsenic vacancies and their interaction with the native defect EL2 in GaAs;Journal of Applied Physics;1996-02
2. Participation ofEL2 in the donor activation of silicon implanted into GaAs;Physical Review B;1994-06-15
3. The spectrum of energy levels of the Ga‐vacancy/deuterium complexes inp‐GaAs;Journal of Applied Physics;1993-04
4. Two experiments divided by 33 years of booming semiconductor physics;Il Nuovo Cimento D;1993-02
5. Lifetime and diffusion length inhomogeneity controlled by point and extended defect interaction in n-GaAs LEC;Applied Surface Science;1993-01
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