Correlation analysis between the current fluctuation characteristics and the conductive filament morphology of HfO2-based memristor-Reference-Cited by-同舟云学术

Correlation analysis between the current fluctuation characteristics and the conductive filament morphology of HfO2-based memristor

Published:2017-11-20 Issue:21 Volume:111 Page:213505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Li Yi¹²^ORCID,Yin Kang-Sheng¹²,Zhang Mei-Yun³,Cheng Long¹²,Lu Ke¹²^ORCID,Long Shi-Bing³,Zhou Yaxiong¹²^ORCID,Wang Zhuorui¹²,Xue Kan-Hao¹²^ORCID,Liu Ming³,Miao Xiang-Shui¹²

Affiliation:

1. School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, China

2. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

3. Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Funder

National Key Research and Development Plan of the MOST of China

Opening Project of Key Laboratory of Microelectronic Device & Integrated Technology, the Institute of Microelectronics CAS

Wuhan Science and Technology Plan

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5003217

Reference34 articles.