The effect of SiO2precipitation in Si on generation currents in MOS capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.326121
Reference9 articles.
1. Defects in silicon substrates
2. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si
3. Nucleation of CuSi precipitate colonies in oxygen‐rich silicon
4. On the determination of minority carrier lifetime from the transient response of an MOS capacitor
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2. Precipitation in Crystalline Solids;Nucleation in Condensed Matter - Applications in Materials and Biology;2010
3. Diffusion–influenced nucleation: a case study of oxygen precipitation in silicon;Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences;2003-01-27
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