Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3116504
Reference42 articles.
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2. Sub-0.1 μm nitride hard mask open process without precuring the ArF photoresist
3. Deposition control for reduction of 193 nm photoresist degradation in dielectric etching
4. Linewidth roughness transfer measured by critical dimension atomic force microscopy during plasma patterning of polysilicon gate transistors
5. Investigation of surface modifications of 193 and 248 nm photoresist materials during low-pressure plasma etching
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