Studies of the interfacial structure of LaAlO3 thin films on silicon by x-ray reflectivity and angle-resolved x-ray photoelectron spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1941470
Reference27 articles.
1. The electronic structure at the atomic scale of ultrathin gate oxides
2. High-resolution depth profiling in ultrathin Al2O3 films on Si
3. Thermodynamic stability of binary oxides in contact with silicon
4. Structure and stability of ultrathin zirconium oxide layers on Si(001)
5. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
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3. Influences of different structures on the characteristics of H 2 O-based and O 3 -based La x Al y O films deposited by atomic layer deposition;Chinese Physics B;2016-05
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