Effects of growth temperature and oxidant feeding time on residual C- and N-related impurities and Si diffusion behavior in atomic-layer-deposited La2O3 thin films-Reference-Cited by-同舟云学术

Effects of growth temperature and oxidant feeding time on residual C- and N-related impurities and Si diffusion behavior in atomic-layer-deposited La2O3 thin films

Published:2014-02 Issue: Volume:292 Page:880-885
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Park Tae Joo,Sivasubramani Prasanna^ORCID,Wallace Robert M.,Kim Jiyoung

Funder

KETI

COSAR

Ministry of Trade, Industry and Energy (MOTIE)

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference47 articles.

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3. Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5Å;Wu;IEEE Electron Device Letters,2000

4. Formation of a stratified lanthanum silicate dielectric by reaction with Si(001);Copel;Applied Physics Letters,2001

5. Thermal annealing effects on the atomic layer deposited LaAlO3 thin films on Si substrate;Eom;Electrochemical and Solid-State Letters,2008

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