Calculations of hole transport characteristics in bulk GaSb with comparisons to GaAs-Reference-Cited by-同舟云学术

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Calculations of hole transport characteristics in bulk GaSb with comparisons to GaAs

Published:2000-07-15 Issue:2 Volume:88 Page:817-821
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Damayanthi P.,Joshi R. P.,McAdoo J. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.373742

Reference54 articles.

1. Gallium antimonide device related properties

2. Molecular-beam epitaxial growth of high-mobility n-GaSb

3. Growth and characterization of undoped and N-type (Te) doped MOVPE grown gallium antimonide

4. Molecular beam epitaxy of GaSb

5. Resonant interband tunneling current in InAs/AlSb/GaSb/AlSb/InAs diodes with extremely thin AlSb barrier layers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs: mobility, drift velocity;New Data and Updates for I-VII, III-V, III-VI and IV-VI Compounds;2008

2. Hole transport characteristics in pure and doped GaSb;Brazilian Journal of Physics;2002-06

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