Molecular beam epitaxy of GaSb
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106037
Reference12 articles.
1. An investigation into the apparent purity limit in GaSb
2. Native defects in the AlxGa1−xSb alloy semiconductor
3. GaSb Prepared from Nonstoichiometric Melts
4. Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface Structures
5. Dynamics of reflection high‐energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)BGaAs substrates
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