Dynamics of reflection high‐energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)BGaAs substrates-Reference-Cited by-同舟云学术

Dynamics of reflection high‐energy electron diffraction intensity oscillations during molecular beam epitaxial growth of GaAs on (111)BGaAs substrates

Published:1990-06-18 Issue:25 Volume:56 Page:2533-2535
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yen M. Y.,Haas T. W.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.102878

Reference18 articles.

1. Oscillations in the surface structure of Sn-doped GaAs during growth by MBE

2. Dynamics of film growth of GaAs by MBE from Rheed observations

3. Damped oscillations in reflection high energy electron diffraction during GaAs MBE

4. Reflection high energy electron diffraction intensity behavior during homoepitaxial molecular beam epitaxy growth of GaAs and implications for growth kinetics and mechanisms

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