Carrier concentration determination by photoreflectance atE1in thin film, highly doped GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105508
Reference17 articles.
1. Third-derivative modulation spectroscopy with low-field electroreflectance
2. Correlation between the photoreflectance response atE1and carrier concentration inn‐ andp‐GaAs
3. Correlation between the photoreflectance response atE1and carrier concentration inn‐ andp‐GaAs
4. Modulation spectroscopy as a tool for electronic material characterization
5. Noncontact doping level determination in GaAs using photoreflectance spectroscopy
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3. Photoreflectance of Zn:AlxGa1-xAs at theE1Transition Energy as a Function of Carrier Concentration and Aluminum Composition;Physica Scripta;2001-01-01
4. Analysis of synchronous phase, pump power, and pump wavelength dependent complex PR spectra from GaAs MBE structures;Physica Status Solidi (a);1995-11-16
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