Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

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Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy

Published:2015-03 Issue: Volume:31 Page:100-105
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Bilel C.,Fitouri H.,Zaied I.,Bchetnia A.,Rebey A.,Jani B. El

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference38 articles.

1. Watnabe;Terao,1982

2. Spectroscopic study of vanadium in GaP and GaAs

3. Transition-metal impurities in III-V compounds

4. Evidence for complexes of hydrogen with deep-level defects in bulk III-V materials

5. New vanadium dopant precursor for GaAs growth by metalorganic vapor-phase epitaxy

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